Method and apparatus for detecting topographical features of microelectronic substrates

ABSTRACT

An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.

BACKGROUND

[0001] The present invention relates to methods and apparatuses fordetecting topographical features of microelectronic substrates, forexample, detecting the surface roughness of a microelectronic substratehaving solder or gold bump terminals. Packaged microelectronicassemblies, such as memory chips and microprocessor chips, typicallyinclude a microelectronic substrate die encased in a plastic, ceramic,or metal protective covering. The dies are typically formed in or on awafer, such as a silicon wafer, and can include functional devices orfeatures, such as memory cells, processing circuits, and interconnectingwiring. Each die also typically includes bond pads or other conductivestructures, such as gold bumps or solder bumps that are electricallycoupled to the functional devices. The conductive structures can then beelectrically coupled to pins or other types of terminals that extendoutside the protective covering for connecting to buses, circuits,and/or other microelectronic assemblies.

[0002] One method for increasing the throughput of packagedmicroelectronic assemblies is to perform many processing operations onthe dies before the dies are singulated from the wafer, a practicereferred to in the industry as wafer-level packaging. One such processstep includes disposing gold or solder bumps on the dies at the waferlevel to form a “bumped” wafer. When performing such operations at thewafer level, it is typically important to measure the average thickness,thickness variation, and roughness of the wafer to ensure that the wafermeets tight dimensional specifications, and to ensure that anymicrodefects of the wafer (which can reduce wafer strength) areeliminated or reduced to acceptable levels.

[0003]FIG. 1A is a schematic illustration of a conventional apparatus 10a for measuring the thickness and thickness variation of a wafer 30.Such apparatuses are available from ADE of Westwood, Mass., under modelnumbers 9520 and 9530. The apparatus 10 a can include a narrow,rod-shaped vacuum chuck 12 that supports the wafer 30, a lowercapacitance probe 11 a that measures the distance to the wafer backsurface, and an upper capacitance probe 11 b that measures the distanceto the wafer front or device-side surface. The thickness of the wafer 30at a particular point on the wafer can be calculated by subtracting thetwo distance measurements from the total distance between thecapacitance probes 11 a and 11 b. The total thickness variation (TTV) ofthe wafer 30 can be calculated by traversing the rotating wafer 30 inbetween the probes 11 a and 11 b, determining a maximum thickness valueand a minimum thickness value, and subtracting the minimum thicknessvalue from the maximum thickness value. The average thickness of thewafer can be calculated by taking the mean of all the thickness valuescollected.

[0004]FIG. 1B is a schematic illustration of an apparatus 10 b used todetermine the roughness of the wafer 30. The apparatus 10 b can includea support table 20 that carries the wafer 30 with the back surface ofthe wafer 30 facing upwardly. A stylus 41 traverses over the backsurface of the wafer 30 and moves up and down as it passes overroughness features on the back surface. A light 12 illuminates the backsurface of the wafer 30 for visual inspection through a microscope 13which can be used to capture a video image that can be saved on a bitmapfile for correlating with the capacitance scan data. Such apparatusesare available from Veeco-Metrology Group of Santa Barbara, Calif.

[0005] One drawback with the devices 10 a and 10 b described above isthat they may not be suitable for detecting the characteristics ofbumped wafers which have solder bumps or gold bumps that project from asurface of the wafer. For example, the apparatus 10 a shown in FIG. 1Atypically cannot distinguish between the surface of the wafer 30 and theelevated surface of the bumps on the wafer 30, and can accordinglyproduce erroneous thickness and thickness variation measurements. Thecapacitance probes 11 a and 11 b typically do not have the highresolution required to determine surface roughness. The apparatus 10 bshown in FIG. 1B typically includes a vacuum system in the support table20 to draw the wafer 30 tightly down against the table 20. When thewafer 30 includes solder bumps or gold bumps, the bumped surface of thewafer 30 may not form an adequate seal with the support table 20.Furthermore, the contact between the support table 20 and the wafer 30can damage the bumps and render all or part of the wafer 30 inoperable.

[0006]FIG. 1C illustrates a conventional apparatus 10 c available fromAugust Technology of Bloomington, Minn., and specifically configured todetect characteristics of a bumped wafer 30. The apparatus 10 c caninclude a support table 20 having a vacuum system to draw the backsurface of the wafer 30 down tightly against the support table 20, withthe bumps 34 facing upwardly. A two-dimensional inspection camera 43traverses above the device-side surface of the wafer 30 to assess theposition, diameter, and/or surface characteristics of the bumps 34. Athree-dimensional inspection camera 44 can traverse above thedevice-side surface of the wafer 30 to determine the height of the bumps34.

[0007] One drawback with the device 10 c shown in FIG. 1c is that it isnot configured to determine the thickness, the total thicknessvariation, or the roughness of the backside of the wafer 30.Accordingly, none of the apparatuses described above with reference toFIGS. 1A-C are capable of adequately determining the characteristics ofthe wafer 30 typically used to assess whether the wafer 30 is ready forsingulation and subsequent packaging operations.

SUMMARY

[0008] The present invention is directed toward apparatuses and methodsfor detecting characteristics of a microelectronic substrate having afirst surface with first topographical features and a second surfacefacing opposite from the first surface and having second topographicalfeatures. In one aspect of the invention, the apparatus can include asupport member configured to carry the microelectronic substrate with afirst portion of the first surface exposed and a second portion of thesecond surface exposed. The apparatus can further include atopographical feature detector positioned proximate to the supportmember and aligned with a first portion of the first surface of themicroelectronic substrate when the microelectronic substrate is carriedby the support member. The topographical feature detector can include anon-capacitive detection device configured to detect roughnesscharacteristics of the first topographical features.

[0009] In a further aspect of the invention, the apparatus can alsoinclude a second topographical feature detector positioned proximate tothe support member and configured to detect a characteristic of thesecond topographical features. The second topographical features caninclude solder bumps or gold bumps, and the first topographical featurescan include a roughness element that is not a conductive connectionstructure. The second topographical feature detector can include a probehaving a contact portion configured to contact the microelectronicsubstrate, or a radiation emitter and receiver configured to directradiation toward the microelectronic substrate and receive reflectedradiation to detect a roughness of the microelectronic substrate. Theradiation emitter can be configured to emit laser radiation, and theradiation receiver can be configured to receive laser radiation.

[0010] The invention is also directed toward a method for detectingcharacteristics of a microelectronic substrate having a first surfacewith first topographical features that do not include conductiveconnection structures, and a second surface facing opposite from thefirst surface and having second topographical features. The method caninclude supporting the microelectronic substrate while at least a firstportion of the first surface is exposed and at least a second portion ofthe second surface is exposed. The method can further include detectinga characteristic of the first topographical features by positioning atopographical detection device at least proximate to the first portionof the first surface and activating the topographical detection devicewhile the first portion of the first surface and the second portion ofthe second surface are exposed to receive feedback from the firsttopographical features.

[0011] In a further aspect of the invention, the method can furtherinclude determining a thickness variation for the microelectronicsubstrate by establishing a reference plane, determining distances fromthe reference plane to a plurality of roughness features of the firstsurface, selecting from the determined distances a minimum distancevalue and a maximum distance value, and subtracting the minimum distancevalue from the maximum distance value. In yet a further aspect of theinvention, the method for determining the thickness variation of themicroelectronic substrate can be carried out on a computer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] FIGS. 1A-C are side views of apparatuses in accordance with theprior art showing selected components schematically.

[0013]FIG. 2 is a side view of an apparatus in accordance with anembodiment of the invention showing selected components schematically.

[0014]FIG. 3A is an enlarged side view of a portion of the apparatusshown in FIG. 2.

[0015]FIG. 3B is a flowchart illustrating a process for determiningthickness variation for a microelectronic substrate with an embodimentof the apparatus shown in FIGS. 2 and 3A.

[0016]FIG. 4 is an enlarged side view of a portion of an apparatus inaccordance with another embodiment of the invention showing selectedcomponents schematically.

DETAILED DESCRIPTION

[0017] The following disclosure describes methods and apparatuses fordetecting topographical features of microelectronic substrates. The term“microelectronic substrate” is used throughout to include substratesupon which and/or in which microelectronic circuits or components, datastorage elements or layers, and/or vias or conductive lines are or canbe fabricated. Many specific details of certain embodiments of theinvention are set forth in the following description and in FIGS. 2-4 toprovide a thorough understanding of these embodiments. One skilled inthe art, however, will understand that the present invention may haveadditional embodiments, and that the invention may be practiced withoutseveral of the details described below.

[0018]FIG. 2 illustrates an apparatus 110 in accordance with anembodiment of the invention. In one aspect of this embodiment, theapparatus 110 can include a support member 120 that supports amicroelectronic substrate 130. The microelectronic substrate 130 canhave a first surface 131 with first topographical features 133 (such asroughness elements) and a second surface 132 facing opposite from thefirst surface 131 and having second topographical features 134. Thesecond topographical features 134 can include solder bumps, gold bumps,or other electrical connection or termination structures that are offsetfrom the second surface 132. The first topographical features caninclude roughness elements, but do not include solder bumps, gold bumpsor other electrical connection or termination structures that are offsetfrom the first surface 131. At least a portion of the first surface 131can remain exposed for access by a first topographical feature detector140 a. At the same time, at least a portion of the second surface 132can remain exposed for access by a second topographical feature detector140 b. Accordingly, the apparatus 110 can simultaneously detectcharacteristics of both the first topographical features 133 and thesecond topographical features 134 while the microelectronic substrate130 is supported by the same support member 120.

[0019] In a further aspect of this embodiment, the support member 120can have a peripheral contact surface 122 configured to contact aperipheral area of the first surface 131 of the microelectronicsubstrate 130 and an opening 121 under an interior portion of the firstcontact surface 131. The opening 121 can be an annular opening largeenough to allow access to at least a representative portion of the firstsurface 131. The contact surface 122 can also extend radially inwardlyfar enough to stably support the microelectronic substrate 130 withoutallowing the microelectronic substrate 130 to unduly sag or warp. Thesize of the peripheral region of the microelectronic substrate 130engaged by the contact surface 122 can depend on factors such as thediameter of the substrate 130 and the thickness and/or rigidity of thesubstrate 130. In other embodiments, the support member 120 can engageonly the peripheral edge of the microelectronic substrate 130, forexample, with suction devices, clamps, and/or other retention elementsconfigured to stably support the microelectronic substrate 130 in a flatorientation.

[0020] In one aspect of an embodiment shown in FIG. 2, the supportmember 120 can include apertures 123 that extend through the contactsurface 122. The apertures 123 can be in fluid communication with achamber 124, and the chamber 124 can be coupled to a vacuum source 126with a conduit 125. Accordingly, the vacuum source 126 can apply avacuum to the vacuum apertures 123 to draw the microelectronic substrate130 against the support member 120. The apertures 123 can also becoupled to a positive pressure source to separate the microelectronicsubstrate 130 from the support member 120. In other embodiments, thesupport member 120 can include other arrangements for securing themicroelectronic substrate 130 during operation. An advantage of any ofthese embodiments is that the microelectronic substrate 130 can restflat on the contact surface 122 while the topographical featuredetectors 140 a and 140 b assess the topographical features 133 and 134,respectively.

[0021] The first topographical feature detector 140 a can be positionedproximate to the exposed portion of the first surface 131, and thesecond topographical feature detector 140 b positioned proximate to theexposed portion of the second surface 132. For example, the firsttopographical feature detector 140 a can include a stylus or probe 141that contacts the first surface 131 to detect differences in elevationbetween one first topographical feature 133 and another. Alternatively,the first topographical feature detector 140 a can include other devicesthat also detect or assess characteristics of the first topographicalfeatures 133 (for example, by receiving feedback from the firsttopographical features 133), as described below with reference to FIG.4.

[0022] The second topographical feature detector 140 b can include atwo-dimensional inspection camera 143 and/or a three-dimensionalinspection camera 144. The two-dimensional inspection camera 143 canhave a line-of-sight directed generally normal to the second surface 132to detect the position, diameter, and/or surface features of the secondtopographical features 134. The surface features detected by thetwo-dimensional camera 143 can include the surface finish of the secondtopographical features 134, and/or whether adjacent topographicalfeatures 134 are inappropriately connected, for example with a solderbridge 136. The three-dimensional inspection camera 144 can have aline-of-sight directed obliquely toward the second surface 132, forexample, to detect the height of the second topographical features 134above the second surface 132. In other embodiments, the secondtopographical feature detector 140 b can include other devices orarrangements.

[0023] In yet a further aspect of an embodiment of the apparatus 110shown in FIG. 2, the first topographical feature detector 140 a can moveover the first surface 131, as indicated by arrow “A.” The secondtopographical feature detector 140 b can move over the second surface132 as indicated by arrow “B.” The movement of the first topographicalfeature detector 140 a can be coordinated with, or independent of, themovement of the second topographical feature detector 140 b. The supportmember 120 can move the microelectronic substrate 130 relative to thetopographical feature detectors 140 a and 140 b (as indicated by arrow“C”) either in conjunction with, or in lieu of, moving the topographicalfeature detectors 140 a and 140 b. In any of the foregoing embodiments,the relative movement between the microelectronic substrate 130 and thetopographical feature detectors 140 a and 140 b can be sufficient toobtain at least a representative sampling of the characteristics of thefirst topographical features 133 and the second topographical features134, respectively.

[0024]FIG. 3A is an enlarged view of a portion of the apparatus 110 andthe microelectronic substrate 130 described above with reference to FIG.2. In one aspect of the embodiment shown in FIG. 3A, the stylus 141 caninclude a stylus tip 145 that moves over the first surface 131 duringoperation. The first topographical features 133 of the first surface 131can include a plurality of recesses 135 and projections 136. As thestylus tip 145 passes over the recesses 135 and projections 136, thefirst topographical feature detector 140a can detect, track and storemeasurements of the distance “D” between a reference plane 146 and thefirst surface 131. A plurality of distance measurements D can then beintegrated or otherwise manipulated to define a roughness measurement ofthe first surface 131. For example, the calculated roughness can be anarithmetic roughness (Ra) determined by the following equation:${Ra} = {\frac{1}{l}{\int_{o}^{l}{\{ {f(x)} \} \quad {x}}}}$

[0025] where l=representative length

[0026] f(x)=function describing surface profile, with f(x)=0 at its meanvalue

[0027] In one embodiment, the target range for Ra can be from about 13microns to about 17 microns, and in other embodiments, the target rangecan have other values.

[0028] In one aspect of the foregoing embodiment, the stylus tip 145 canremain in contact with the first surface 131 of the microelectronicsubstrate 130 as the stylus 141 and the microelectronic substrate 130move relative to each other. Alternatively, the stylus tip 145 candisengage from the first surface 131 when the stylus 141 and/or themicroelectronic substrate 130 are moved, and re-engage when a newrelative position is reached. In still a further alternate arrangement,the apparatus 110 can include a plurality of styli that simultaneouslymake individual distance measurements, reducing or eliminating the needto move the styli or the microelectronic substrate 130.

[0029] In one embodiment, the first topographical feature detector 140 acan be used to determine a thickness variation for the microelectronicsubstrate using the information received from the stylus 141.Accordingly, the process can include tracking a minimum distance D₁(corresponding to the distance between the reference plane 146 and thehighest projection 136), and a maximum distance D₂ (corresponding to thedistance between the reference plane 146 and the deepest recess 135).Assuming the microelectronic substrate 130 is positioned flat on thesupport member 120 (FIG. 2) and the second surface 132 is flat, thetotal thickness variation (TTV) of the microelectronic substrate 130 canbe computed subtracting D₁ from D₂. This method for determining TTV canbe particularly useful when the processes used to form themicroelectronic substrate 130 are reliable enough to produce substrateshaving a repeatable overall thickness value. In such instances, theapparatus 110 need only provide data on surface roughness and totalthickness variation and need not detect or calculate the overallsubstrate thickness.

[0030] One or more of the foregoing process steps can be completedautomatically by a computer program run on either the firsttopographical feature detector 140 a or a computer coupled to the firsttopographical feature detector 140 a. Referring now to FIG. 3B, theprocess 300 can include receiving a plurality of measurements fordistances between a reference plane and a corresponding plurality oftopographical features of a microelectronic substrate (step 302). Theprocess can further include selecting a minimum distance value from theplurality of distance values (step 304) and selecting a maximum distancevalue from the plurality of distance values (step 306). In step 308, theprocess can include determining a thickness variation value for themicroelectronic substrate by subtracting the minimum distance value fromthe maximum distance value. The process can optionally includedetermining a roughness value for the microelectronic substrate, forexample, by using any of a variety of known summation and/or integrationtechniques (step 310). The thickness variation value and/or theroughness value can be output to a user in step 312, for example, via avisual digital display or a printed hard copy.

[0031] If the total thickness variation and/or roughness valuesdetermined for the first surface 131 are outside specified limits, theprocess used to remove material from the first surface 131 (for example,by backgrinding the first surface 131 with a Model DFG 850 backgrinderavailable from DISCO Corporation of Tokyo, Japan) can be modified.Accordingly, the next microelectronic substrate 130 (or batch ofmicroelectronic substrates 130) can have the proper amount of materialremoved from it prior to being assessed by the apparatus 110.

[0032] One feature of the apparatus 110 described above with referenceto FIGS. 2 and 3 is that the second surface 132 of the microelectronicsubstrate 130 is exposed while roughness and total thickness variationmeasurements are made on the first surface 131. Accordingly, theapparatus 110 can be less likely to damage the second topographicalfeatures 134, for example, when the second topographical features 134include solder or gold bumps, or other protruding conductive elements.

[0033] Another advantage of this arrangement is that the apparatus 110can simultaneously assess characteristics of the first surface 131 andthe second surface 132. Accordingly, the overall time required to assessthe characteristics of the microelectronic substrate 130 can be reducedbecause both processes can be carried out at the same time. As a result,the throughput for wafer-level packaging can be increased.

[0034] Yet another advantage of the foregoing arrangement is that themicroelectronic substrate 130 can remain on the same support member 120while both the first surface 131 and the second surface 132 areassessed. Accordingly, the microelectronic substrate 130 is less likelyto become damaged as a result of moving the microelectronic substrate130 from one support member to another.

[0035] Still another advantage of the foregoing arrangement is that theapparatus 110 can be used to monitor the quality of the backgrindingprocess. Accordingly, any discrepancies in the backgrinding process canbe detected at an early stage and corrected by additional backgrindingand/or by adjusting the backgrinding apparatus.

[0036] In other embodiments, the apparatus 110 can have otherarrangements. For example, as shown in FIG. 4, the first topographicalfeature detector 140 a can include a non-contact detector 142 inaddition to or in lieu of the stylus 141 described above with referenceto FIGS. 2 and 3. In a further aspect of this embodiment, thenon-contact detector 142 can issue emitted or incident radiation 147(such as a laser beam) that strikes the first surface 131 of themicroelectronic substrate 130 and returns as reflected radiation 148.The reflected radiation 148 is received by a sensor of the non-contactdetector 142. The radiation emitted and received by the non-contactdetector 142 can include visible laser radiation in one embodiment, andcan include other types of visible or non-visible radiation in otherembodiments. In still a further embodiment, the non-contact detector 142can include a receiver (such as a camera) that detects radiation emittedby a separate source (such as a light source) and reflected by the firstsurface 131. In any of these embodiments, the non-contact detector 142can be configured to interpret the reflected radiation 148 (for example,by comparison to a fixed reference plane) to determine the roughnesscharacteristics of the first surface 131 and the total thicknessvariation of the microelectronic substrate 130.

[0037] In one embodiment, the non-contact detector 142 can be movedrelative to the microelectronic substrate 130 to scan the emittedradiation 147 over the first surface 131. Alternatively, themicroelectronic substrate 130 can be moved relative to the non-contactdetector 142, or both the microelectronic substrate 130 and thenon-contact detector 142 can be moved relative to each other. In still afurther embodiment, the non-contact detector 142 can include astationary device that receives (and optionally issues) a broad beam ofradiation to detect a representative roughness and total thicknessvariation of the lower surface 131 without moving the microelectronicsubstrate 130. An advantage of this latter arrangement is that the timeto determine the characteristics of the first surface 131 can be reducedbecause neither the microelectronic substrate 130 nor the non-contactdetector 142 need be moved relative to each other.

[0038] In still a further embodiment, the apparatus 110 can beconfigured to include a stylus 141 that is interchangeable with anon-contact detector 142. For example, the stylus 141 (which can be arelatively inexpensive piece of equipment) can be used to detect thesurface characteristics of a relatively thick microelectronic substrate130, which is less likely to become damaged or warped as a result ofcontact with the stylus 141. The non-contact detector 142 (which is arelatively more expensive piece of equipment) can be used in place ofthe stylus 141 to detect the surface characteristics of relatively thinmicroelectronic substrates 130, which are more likely to become damagedby direct contact with the stylus 141.

[0039] In other embodiments, the apparatus 110 can have otherarrangements. In one such embodiment, the apparatus 110 need not includethe second topographical feature detector 140 b, for example, when thecharacteristics of the second topographical features 134 are known to anadequate degree, or when it is not necessary to determine thecharacteristics of the second topographical features 134, or when thesecharacteristics can be determined from another apparatus. In stillfurther embodiments, the support member 120 can have arrangements otherthan the generally ring-shaped arrangement described above withreference to FIG. 2. For example, the support member 120 can include aplurality of circumferentially spaced-apart support portions thattogether provide support for the microelectronic substrate 130. In yetfurther embodiments, the first topographical feature detector caninclude non-capacitive detection devices other than the stylus 141 andthe radiation receiver and emitter described above, so long as thenon-capacitive detection devices are configured to detect the surfaceroughness presented by features other than conductive terminal orconnection structures (such as solder bumps or gold bumps).

[0040] From the foregoing, it will be appreciated that specificembodiments of the invention have been described herein for purposes ofillustration, but that various modifications may be made withoutdeviating from the spirit and scope of the invention. Accordingly, theinvention is not limited except as by the appended claims.

I/we claim:
 1. An apparatus for detecting characteristics of amicroelectronic substrate having a first surface with firsttopographical features and a second surface facing opposite from thefirst surface and having second topographical features, the apparatuscomprising: a support member configured to carry the microelectronicsubstrate with a first portion of the first surface exposed and a secondportion of the second surface exposed; and a topographical featuredetector positioned proximate to the support member and aligned with thefirst portion of the first surface of the microelectronic substrate, thetopographical feature detector including a non-capacitive detectiondevice configured to detect roughness characteristics of the firstsurface when the microelectronic substrate is carried by the supportmember.
 2. The apparatus of claim 1 wherein the topographical featuredetector is configured to: determine distances from a reference plane toa plurality of the first topographical features; select from thedetermined distances a minimum distance value; select from thedetermined distances a maximum distance value; and subtract the minimumdistance value from the maximum distance value.
 3. The apparatus ofclaim 1 wherein the second topographical features include conductivestructures protruding from the second surface, and wherein thetopographical feature detector is a first topographical featuredetector, and wherein the apparatus further comprises a secondtopographical feature detector positioned proximate to the supportmember and configured to detect a characteristic of the secondtopographical features when the microelectronic substrate is supportedby the support member.
 4. The apparatus of claim 1 wherein at least oneof the topographical feature detector and the support member is movablerelative to the other while the microelectronic substrate is carried bythe support member.
 5. The apparatus of claim 1 wherein thetopographical feature detector includes of a first system configured todetect roughness features of microelectronic substrates having a firstrange of thicknesses, the first system being interchangeable with asecond system configured to detect roughness features of microelectronicsubstrates having a second range of thicknesses, with a maximumthickness of the second range being greater than a maximum thickness ofthe first range.
 6. The apparatus of claim 1 wherein the secondtopographical feature includes a solder bump, and wherein the apparatusfurther comprises a raised feature detector positioned proximate to thesupport member and configured to detect a characteristic of the solderbump.
 7. The apparatus of claim 1 wherein the second topographicalfeature includes a gold bump, and wherein the apparatus furthercomprises a feature detector positioned proximate to the support memberand configured to detect a characteristic of the gold bump.
 8. Theapparatus of claim 1, further comprising: a first camera positionedproximate to the support member and configured to detect at least one ofa position, a surface defect and a bridge of at least one of the secondtopographical features of the microelectronic substrate when themicroelectronic substrate is supported by the support member; and asecond camera positioned proximate to the support member and configuredto detect a height of at least one of the second topographical featuresof the microelectronic substrate when the microelectronic substrate issupported by the support member.
 9. The apparatus of claim 1 wherein thesupport member has a contact surface with a plurality of apertures, theapertures being coupleable to a vacuum source to draw themicroelectronic substrate into contact with the support member.
 10. Theapparatus of claim I wherein the support member has a generallyring-shaped contact surface, and wherein the first portion of the firstsurface of the microelectronic substrate is disposed annularly inwardlyfrom the contact surface when the support member carries themicroelectronic substrate.
 11. The apparatus of claim 1 wherein thetopographical feature detector includes a probe having a contact portionconfigured to contact the microelectronic substrate, the topographicalfeature detector being configured to detect a roughness of themicroelectronic substrate based on measurements at a plurality oflocations on the microelectronic substrate.
 12. The apparatus of claim 1wherein the topographical feature detector includes a radiation receiverpositioned to receive radiation reflected from the microelectronicsubstrate, the topographical feature detector being configured to detecta roughness of the microelectronic substrate based on measurements at aplurality of locations on the microelectronic substrate.
 13. Theapparatus of claim 1 wherein the topography detector includes a laserbeam emitter positioned to direct radiation toward the microelectronicsubstrate, the topography detector further including a laser beamreceiver positioned to receive radiation reflected from themicroelectronic substrate, the topography detector being configured todetect a roughness of the microelectronic substrate based onmeasurements at a plurality of locations on the microelectronicsubstrate.
 14. An apparatus for detecting characteristics of amicroelectronic substrate having a first surface with firsttopographical features that do not include conductive connectionstructures, and a second surface facing opposite from the first surfaceand having second topographical features, the second topographicalfeatures including conductive structures protruding from the secondsurface, the apparatus comprising: a support member configured to carrythe microelectronic substrate with a first portion of the first surfaceexposed and a second portion of the second surface exposed; and atopographical feature detector positioned proximate to the supportmember and aligned with the first portion of the first surface of themicroelectronic substrate, the topographical feature detector includingat least one of a contact probe and a radiation receiver positioned todetect characteristics of the first topographical features while themicroelectronic substrate is carried by the support member withoutcontacting the conductive structures protruding from the second portionof the second surface.
 15. The apparatus of claim 14 wherein thetopographical feature detector is configured to: determine distancesfrom a reference plane to a plurality of roughness features; select fromthe determined distances a minimum distance value; select from thedetermined distances a maximum distance value; and subtract the minimumdistance value from the maximum distance value.
 16. The apparatus ofclaim 14 wherein the topographical feature detector is a firsttopographical feature detector, and wherein the apparatus furthercomprises a second topographical feature detector positioned proximateto the support member and configured to detect a characteristic of thesecond topographical features when the microelectronic substrate issupported by the support member.
 17. An apparatus for detectingcharacteristics of a microelectronic substrate having a first surfacewith first topographical features that do not include conductiveconnection structures, and a second surface facing opposite from thefirst surface and having second topographical features, the secondtopographical features including conductive structures protruding fromthe second surface, the apparatus comprising: a support memberconfigured to carry the microelectronic substrate with a first portionof the first surface exposed and a second portion of the second surfaceexposed; a first topographical feature detector positioned proximate tothe support member and aligned with the first portion of the firstsurface of the microelectronic substrate when the microelectronicsubstrate is carried by the support member to detect characteristics ofthe first topographical features, the first topographical featuredetector including at least one of a contact probe positioned to contactthe first surface and a radiation receiver positioned to receiveradiation reflected from the first surface; and a second topographicalfeature detector positioned proximate to the support member and alignedwith the second portion of the second surface of the microelectronicsubstrate when the microelectronic substrate is carried by the supportmember to detect characteristics of the conductive structures protrudingfrom the second surface.
 18. The apparatus of claim 17 wherein the firsttopographical feature detector is configured to: determine distancesfrom a reference plane to a plurality of the first topographicalfeatures; select from the determined distances a minimum distance value;select from the determined distances a maximum distance value; andsubtract the minimum distance value from the maximum distance value todetermine a thickness variation for the microelectronic substrate. 19.The apparatus of claim 17 wherein the first topographical featuredetector includes a first system configured to detect roughness featuresof microelectronic substrates having a first range of thicknesses,interchangeable with a second system configured to detect roughnessfeatures of microelectronic substrates having a second range ofthicknesses different than the first range of thicknesses.
 20. Theapparatus of claim 17 wherein the second topographical feature detectorincludes: a first camera positioned proximate to the support member andconfigured to detect at least one of a position, a surface defect and abridge of at least one of the second topographical features of themicroelectronic substrate when the microelectronic substrate issupported by the support member; and a second camera positionedproximate to the support member and configured to detect a height of atleast one of the second topographical features of the microelectronicsubstrate when the microelectronic substrate is supported by the supportmember.
 21. The apparatus of claim 17 wherein the support member has acontact surface with a plurality of apertures, the apertures beingcoupleable to a vacuum source to draw the microelectronic substrate intocontact with the support member.
 22. The apparatus of claim 17 whereinthe support member has a generally ring-shaped contact surface, andwherein the first portion of the first surface is disposed annularlyinwardly from the contact surface when the support member carries themicroelectronic substrate.
 23. The apparatus of claim 17 wherein thefirst topographical feature detector includes a probe having a contactportion configured to contact the microelectronic substrate, the firsttopographical feature detector being configured to detect a roughness ofthe microelectronic substrate based on measurements at a plurality oflocations on the microelectronic substrate.
 24. The apparatus of claim17 wherein the first topographical feature detector includes a radiationemitter positioned to direct radiation toward the microelectronicsubstrate, the first topographical feature detector further including aradiation receiver positioned to receive radiation reflected from themicroelectronic substrate, the first topographical feature detectorbeing configured to detect a roughness of the microelectronic substratebased on measurements at a plurality of locations on the microelectronicsubstrate.
 25. An apparatus for detecting characteristics of amicroelectronic substrate having a first surface with roughness featuresand a second surface facing opposite from the first surface and havingraised conductive features, the apparatus comprising: a support memberhaving a contact surface configured to contact the first surface of themicroelectronic substrate, the support member being shaped to leave afirst portion of the first surface exposed and a second portion of thesecond surface exposed when the microelectronic substrate contacts thesupport member; a roughness detector that includes a probe having acontact portion configured to contact the microelectronic substrate, theroughness detector being configured to detect a roughness of themicroelectronic substrate based on measurements at a plurality oflocations on the first surface of the microelectronic substrate; and anactuator coupled to at least one of the roughness detector and thesupport member to move at least one of the roughness detector and thesupport member relative to the other while the support member supportsthe microelectronic substrate.
 26. The apparatus of claim 25 wherein thecontact surface has apertures coupleable to a vacuum source to draw themicroelectronic substrate toward the support member.
 27. The apparatusof claim 25 wherein the roughness detector is configured to: determinedistances from a reference plane to a plurality of the roughnessfeatures on the first surface of the microelectronic substrate; selectfrom the determined distances a minimum distance value; select from thedetermined distances a maximum distance value; and subtract the minimumdistance value from the maximum distance value.
 28. The apparatus ofclaim 25 wherein the roughness detector includes a first systemconfigured to detect roughness features of microelectronic substrateshaving a first range of thicknesses, interchangeable with a secondsystem configured to detect roughness features of microelectronicsubstrates having a second range of thicknesses different than the firstrange of thicknesses.
 29. The apparatus of claim 25 wherein the raisedconductive features include solder bumps and/or gold bumps, and whereinthe apparatus further comprises a raised feature detector positionedproximate to the support member and configured to detect acharacteristic of the solder bumps and/or gold bumps.
 30. The apparatusof claim 25, further comprising: a first camera positioned proximate tothe support member and configured to detect at least one of a position,a surface defect and a bridge of at least one of the raised conductivefeatures of the microelectronic substrate when the microelectronicsubstrate is supported by the support member; and a second camerapositioned proximate to the support member and configured to detect aheight of at least one of the raised conductive features of themicroelectronic substrate when the microelectronic substrate issupported by the support member.
 31. The apparatus of claim 25 whereinthe support member has a generally ring-shaped contact surface, andwherein the first portion of the first surface is disposed annularlyinwardly from the contact surface when the support member carries themicroelectronic substrate.
 32. An apparatus for detectingcharacteristics of a microelectronic substrate having a first surfacewith roughness features and a second surface facing opposite from thefirst surface and having raised conductive features, the apparatuscomprising: a support member having a contact surface configured tocontact the first surface of the microelectronic substrate, the supportmember being shaped to leave a first portion of the first surface and asecond portion of the second surface exposed when the microelectronicsubstrate contacts the support member; a roughness detector thatincludes a radiation receiver positioned to receive radiation reflectedfrom the first surface of the microelectronic substrate, the roughnessdetector being configured to detect a roughness of the microelectronicsubstrate based on measurements at a plurality of locations on the firstsurface of the microelectronic substrate; and an actuator coupled to atleast one of the roughness detector and the support member to move atleast one of the roughness detector and the support member relative tothe other while the support member supports the microelectronicsubstrate.
 33. The apparatus of claim 32 wherein the contact surface hasapertures coupleable to a vacuum source to draw the microelectronicsubstrate into contact with the support member.
 34. The apparatus ofclaim 32 wherein the roughness detector includes a radiation emitter isconfigured to emit laser radiation and a radiation receiver configuredto receive laser radiation.
 35. The apparatus of claim 32 wherein theroughness detector is configured to: determine distances from areference plane to a plurality of the roughness features on the firstsurface of the microelectronic substrate; select from the determineddistances a minimum distance value; select from the determined distancesa maximum distance value; and subtract the minimum distance value fromthe maximum distance value.
 36. The apparatus of claim 32, furthercomprising: a first camera positioned proximate to the support memberand configured to detect at least one of a position, a surface defectand a bridge of at least one of the raised conductive features of themicroelectronic substrate when the microelectronic substrate issupported by the support member; and a second camera positionedproximate to the support member and configured to detect a height of atleast one of the raised conductive features of the microelectronicsubstrate when the microelectronic substrate is supported by the supportmember.
 37. The apparatus of claim 32 wherein the support member has agenerally ring-shaped contact surface, and wherein the first portion ofthe first surface is disposed annularly inwardly from the contactsurface when the support member carries the microelectronic substrate.38. An apparatus for detecting characteristics of a microelectronicsubstrate having a first surface with roughness features and a secondsurface facing opposite from the first surface and having raisedconductive features, the apparatus comprising: a generally ring-shapedsupport member; a contact surface on the support member, the contactsurface being configured to contact the first surface of themicroelectronic substrate with a first portion of the first surfaceexposed and a second portion of the second surface exposed; a roughnessdetector positioned proximate to the support member; the roughnessdetector being and aligned with the first portion of the first surfaceof the microelectronic substrate when the microelectronic substrate iscarried by the support member; the roughness detector including at leastone of a contact probe configured to contact the first surface, and aremote detector configured to receive radiation reflected from the firstsurface; wherein at least one of the roughness detector and the supportmember is movable relative to the other while the microelectronicsubstrate is carried by the support member, and wherein the apparatusfurther comprises; a first feature detector positioned proximate to thesecond surface of the microelectronic substrate to detect at least oneof a diameter, position, and surface characteristic of the raisedconductive features when the microelectronic substrate is carried by thesupport member; and a second feature detector positioned proximate tothe second surface of the microelectronic substrate to detect a heightof the raised conductive features relative to the second surface whenthe microelectronic substrate is carried by the support member.
 39. Theapparatus of claim 38 wherein the raised conductive features includesolder bumps and/or gold bumps, and wherein the first and second featuredetectors are configured to detect characteristics of the solder bumpsand/or gold bumps.
 40. An apparatus for detecting characteristics of amicroelectronic substrate having a first surface with firsttopographical features that include roughness elements, and a secondsurface facing opposite from the first surface and having secondtopographical features that include raised conductive structures, theapparatus comprising: support means configured to carry themicroelectronic substrate with a first portion of the first surfaceexposed and a second portion of the second surface exposed; firsttopography detection means positioned proximate to the support memberand aligned with the first portion of the first surface of themicroelectronic substrate to detect at least one or a roughness and athickness variation of the first surface when the microelectronicsubstrate is carried by the support member, the first topographydetection means including at least one of a contact probe positioned tocontact the first surface and a radiation receiver positioned to receiveradiation reflected from the first surface; and second topographydetection means positioned proximate to the support member and alignedwith the second portion of the second surface to detect a characteristicof the raised conductive structures when the microelectronic substrateis carried by the support means.
 41. The apparatus of claim 40, furthercomprising actuator means operatively coupled to at least one of thefirst topography detection means and the support means to move at leastone of the first topography detection means and the support meansrelative to the other while the microelectronic substrate is carried bythe support means.
 42. The apparatus of claim 40 wherein the firsttopography detection means is configured to: determine distances from areference plane to a plurality of roughness features of themicroelectronic substrate; select from the determined distances aminimum distance value; select from the determined distances a maximumdistance value; and subtract the minimum distance value from the maximumdistance value.
 43. The apparatus of claim 40 wherein the firsttopography detection means includes a first system configured to detectroughness features of microelectronic substrates having a first range ofthicknesses, interchangeable with a second system configured to detectroughness features of microelectronic substrates having a second rangeof thicknesses different than the first range of thicknesses.
 44. Theapparatus of claim 40 wherein the second topography detection meansincludes: a first camera positioned proximate to the support means andconfigured to detect at least one of a position, a surface defect and abridge of at least one of the second topographical features of themicroelectronic substrate when the microelectronic substrate issupported by the support means; and a second camera positioned proximateto the support means and configured to detect a height of at least oneof the second topographical features of the microelectronic substratewhen the microelectronic substrate is supported by the support means.45. The apparatus of claim 38 wherein the support means has a contactsurface with a plurality of apertures, the apertures being coupleable toa vacuum source to draw the microelectronic substrate into contact withthe support member.
 46. The apparatus of claim 38 wherein the supportmeans has a generally ring-shaped contact surface, and wherein the firstportion of the first surface is disposed annularly inwardly from thecontact surface when the support member carries the microelectronicsubstrate.
 47. The apparatus of claim 38 wherein the first topographydetection means includes a probe having a contact portion configured tocontact the first surface of the microelectronic substrate, the firsttopography detection means being configured to detect a roughness of thefirst surface based on measurements at a plurality of locations on thefirst surface.
 48. The apparatus of claim 38 wherein the firsttopography detection means includes a radiation receiver positioned toreceive radiation reflected from the first surface, the first topographydetection means being configured to detect a roughness of the firstsurface based on measurements at a plurality of locations on the firstsurface.
 49. A method for processing a microelectronic substrate,comprising: forming first topographical features on or in a firstsurface of the microelectronic substrate, the first topographicalfeatures including roughness features but not including electricalconnection structures offset from the first surface; forming secondtopographical features on or in a second surface of the microelectronicsubstrate facing opposite from the first surface, the secondtopographical features including conductive structures protruding fromthe second surface; supporting the microelectronic substrate while afirst portion of the first surface is exposed and a second portion ofthe second surface is exposed; and detecting a characteristic of thefirst topographical features by positioning a topographical detectiondevice at least proximate to the first portion of the first surface andactivating the topographical detection device while the first portion ofthe first surface is exposed and while the second portion of the secondsurface is exposed with the conductive structures protruding from thesecond surface.
 50. The method of claim 49 wherein detecting acharacteristic of the first topographical features includes detecting aroughness of the first portion of the first surface by positioning aroughness detection device at least proximate to the first portion andactivating the roughness detection device while the first portion of thefirst surface is exposed.
 51. The method of claim 49 wherein detecting acharacteristic of the first portion includes receiving radiationreflected from the first portion.
 52. The method of claim 49 whereinsupporting the microelectronic substrate includes carrying themicroelectronic substrate with a support member, and wherein the methodfurther comprises detecting a characteristic of at least one of thesecond topographical features while carrying the microelectronicsubstrate with the support member.
 53. The method of claim 49, furthercomprising moving at least one of the microelectronic substrate and thetopographical detection device relative to the other while the firstportion of the first surface is exposed.
 54. The method of claim 49,further comprising determining a thickness variation for themicroelectronic substrate by: establishing a reference plane;determining distances from the reference plane to a plurality ofroughness features of the first surface; selecting from the determineddistances a minimum distance value; selecting from the determineddistances a maximum distance value; and subtracting the minimum distancevalue from the maximum distance value.
 55. The method of claim 49wherein supporting the microelectronic substrate includes positioningthe microelectronic substrate on a generally ring-shaped support surfacewith the first portion of the first surface positioned radially inwardfrom the support surface.
 56. The method of claim 49 wherein supportingthe microelectronic substrate includes forcing the microelectronicsubstrate into contact with a support member.
 57. The method of claim 47wherein supporting the microelectronic substrate includes applying avacuum to the microelectronic substrate to draw the microelectronicsubstrate into contact with a support member.
 58. The method of claim47, further comprising detecting at least one of a position, a surfacedefect, and a bridge of at least one of the second topographicalfeatures while supporting the microelectronic substrate with the firstportion of the first surface exposed and the second portion of thesecond surface exposed.
 59. The method of claim 49, further comprisingdetecting a height of at least one of the second topographical featuresof the microelectronic substrate while supporting the microelectronicsubstrate with the first portion of the first surface exposed and thesecond portion of the second surface exposed.
 60. The method of claim49, further comprising detecting a characteristic of at least one of thesecond topographical features by directing laser radiation toward themicroelectronic substrate and receiving radiation reflected from themicroelectronic substrate while the first portion of the first surfaceis exposed and the second portion of the second surface is exposed. 61.The method of claim 49, further comprising removing material from thefirst surface of the microelectronic before, after, or both before andafter detecting a characteristic of the first topographical features.62. The method of claim 49, further comprising: removing a first portionof material from the first surface of the microelectronic substrateprior to detecting a characteristic of the first topographical features;and removing a second portion of material from the first surface of themicroelectronic substrate after detecting a characteristic of the firsttopographical features.
 63. A method for detecting characteristics of amicroelectronic substrate having a first surface with firsttopographical features that do not include conductive connectionstructures, and a second surface facing opposite from the first surfaceand having second topographical features, the method comprising:supporting the microelectronic substrate while at least a first portionof the first surface is exposed and at least a second portion of thesecond surface is exposed; and detecting a roughness of the firstsurface by positioning a topographical detection device at leastproximate to the first topographical features of the first surface andactivating the topographical detection device to receive feedback fromthe first topographical features while the first portion of the firstsurface and the second portion of the second surface are exposed. 64.The method of claim 63 wherein detecting a roughness of the firstsurface includes contacting a probe with the first portion of the firstsurface to determine a roughness of the first portion.
 65. The method ofclaim 63 wherein detecting a roughness of the first surface includesreceiving radiation reflected from the first portion.
 66. The method ofclaim 63 wherein supporting the microelectronic substrate includescarrying the microelectronic substrate with a support member, andwherein the method further comprises detecting a characteristic of atleast one of the second topographical features while carrying themicroelectronic substrate with the support member.
 67. The method ofclaim 63, further comprising moving at least one of the microelectronicsubstrate and the topographical detection device relative to the otherwhile the first portion of the first surface is exposed.
 68. The methodof claim 63, further comprising determining a thickness variation forthe microelectronic substrate by: establishing a reference plane;determining distances from the reference plane to a plurality ofroughness features of the first surface; selecting from the determineddistances a minimum distance value; selecting from the determineddistances a maximum distance value; and subtracting the minimum distancevalue from the maximum distance value.
 69. The method of claim 63wherein supporting the microelectronic substrate includes positioningthe microelectronic substrate on a generally ring-shaped support surfacewith the first portion of the first surface positioned radially inwardlyfrom the support surface.
 70. The method of claim 63 wherein supportingthe microelectronic substrate includes forcing the microelectronicsubstrate into contact with a support member.
 71. The method of claim 63wherein supporting the microelectronic substrate includes applying avacuum to the microelectronic substrate to draw the microelectronicsubstrate into contact with a support member.
 72. The method of claim63, further comprising detecting a characteristic of at least one of thesecond topographical features while supporting the microelectronicsubstrate with the first portion of the first surface exposed and thesecond portion of the second surface exposed.
 73. The method of claim63, further comprising detecting at least one of a position, a surfacedefect, and a bridge of at least one of the second topographicalfeatures while supporting the microelectronic substrate with the firstportion of the first surface exposed and the second portion of thesecond surface exposed.
 74. The method of claim 63, further comprisingdetecting a height of at least one of the second topographical featuresof the microelectronic substrate while supporting the microelectronicsubstrate with the first portion of the first surface exposed and thesecond portion of the second surface exposed.
 75. The method of claim63, further comprising detecting a characteristic of at least one of thesecond topographical features by directing laser radiation toward themicroelectronic substrate and receiving radiation reflected from themicroelectronic substrate while the first portion of the first surfaceis exposed and the second portion of the second surface is exposed. 76.The method of claim 63, further comprising removing material from thefirst surface of the microelectronic before, after, or both before andafter detecting a characteristic of the first topographical features.77. The method of claim 63, further comprising: removing a first portionof material from the first surface of the microelectronic substrateprior to detecting a characteristic of the first topographical features;and removing a second portion of material from the first surface of themicroelectronic substrate after detecting a characteristic of the firsttopographical features.
 78. A method in a computer for detectingcharacteristics of a microelectronic substrate having a first surfacewith roughness features and a second surface facing opposite from thefirst surface, the method comprising: receiving a plurality ofmeasurements for distances between a reference plane and a correspondingplurality of the roughness features of the first surface of themicroelectronic substrate; selecting a minimum distance value from theplurality of distance values; selecting a maximum distance value fromthe plurality of distance values; and determining a thickness variationfor the microelectronic substrate by subtracting the minimum distancevalue from the maximum distance value.
 79. The method of claim 78,further comprising determining a roughness value for the microelectronicsubstrate from the plurality of distance measurements.
 80. The method ofclaim 78 wherein receiving the plurality of distance measurementsincludes receiving a plurality of distance measurements made by a probethat contacts the microelectronic substrate.
 81. The method of claim 78wherein receiving the plurality of distance measurements includesreceiving a plurality of distance measurements from a device thatreceives radiation reflected from the microelectronic substrate.
 82. Amethod for detecting characteristics of a microelectronic substratehaving a first surface with roughness features and a second surfacefacing opposite from the first surface and having protruding conductivefeatures, the method comprising: supporting the microelectronicsubstrate with a first portion of the first surface exposed and a secondportion of the second surface exposed; and detecting a roughness of thefirst portion of the first surface by contacting a probe with the firstportion and moving at least one of the probe and the microelectronicsubstrate relative to the other while the first portion of the firstsurface is exposed and the second portion of the second surface isexposed.
 83. The method of claim 82 wherein supporting themicroelectronic substrate includes carrying the microelectronicsubstrate with a support member, and wherein the method furthercomprises detecting a characteristic of at least one of the protrudingconductive features while carrying the microelectronic substrate withthe support member.
 84. The method of claim 82, further comprisingdetermining a thickness variation for the microelectronic substrate by:establishing a reference plane; determining distances from the referenceplane to a plurality of roughness features of the first surface;selecting from the determined distances a minimum distance value;selecting from the determined distances a maximum distance value; andsubtracting the minimum distance value from the maximum distance value.85. The method of claim 82 wherein supporting the microelectronicsubstrate includes positioning the microelectronic substrate on agenerally ring-shaped support surface with the first portion of thefirst surface positioned radially inwardly from the support surface. 86.The method of claim 82 wherein supporting the microelectronic substrateincludes applying a vacuum to the microelectronic substrate to draw themicroelectronic substrate into contact with a support member.
 87. Themethod of claim 82, further comprising: removing a first portion ofmaterial from the first surface of the microelectronic substrate priorto detecting a characteristic of the first topographical features; andremoving a second portion of material from the first surface of themicroelectronic substrate after detecting a characteristic of the firsttopographical features.
 88. A method for detecting characteristics of amicroelectronic substrate having a first surface with roughness featuresand a second surface facing opposite from the first surface and havingprotruding conductive features, the method comprising: supporting themicroelectronic substrate with a first portion of the first surfaceexposed and a second portion of the second surface exposed; anddetecting a roughness of the first portion of the first surface bydirecting radiation toward the microelectronic substrate, receivingradiation reflected from the microelectronic substrate at a radiationreceives, and moving at least one of the receiver and themicroelectronic substrate relative to the other while the first portionof the first surface is exposed and the second portion of the secondsurface is exposed.
 89. The method of claim 88 wherein supporting themicroelectronic substrate includes carrying the microelectronicsubstrate with a support member, and wherein the method furthercomprises detecting a characteristic of at least one of the protrudingconductive features while carrying the microelectronic substrate withthe support member.
 90. The method of claim 88, further comprisingdetermining a thickness variation for the microelectronic substrate by:establishing a reference plane; determining distances from the referenceplane to plurality of roughness features of the first surface; selectingfrom the determined distances a minimum distance value; selecting fromthe determined distances a maximum distance value; and subtracting theminimum distance value from the maximum distance value.
 91. The methodof claim 88 wherein supporting the microelectronic substrate includespositioning the microelectronic substrate on a generally ring-shapedsupport surface with the first portion of the first surface positionedradially inwardly from the support surface.
 92. The method of claim 88wherein supporting the microelectronic substrate includes applying avacuum to the microelectronic substrate to draw the microelectronicsubstrate into contact with a support member.
 93. The method of claim88, further comprising: removing a first portion of material from thefirst surface of the microelectronic substrate prior to detecting aroughness of the first surface; and removing a second portion ofmaterial from the first surface of the microelectronic substrate afterdetecting a roughness of the first surface.
 94. A method for detectingcharacteristics of a microelectronic substrate having a first surfacewith roughness features and a second surface facing opposite from thefirst surface and having protruding conductive features, the methodcomprising: supporting the microelectronic substrate by carrying themicroelectronic substrate with a support member while a first portion ofthe first surface is exposed and a second portion of the second surfaceis exposed; detecting a roughness of the first portion of the firstsurface by positioning a roughness detection device at least proximateto the first portion and moving at least one of the detection device andthe microelectronic substrate relative to the other while the firstportion of the first surface is exposed and the second portion of thesecond surface is exposed; and detecting a characteristic of at leastone of the protruding conductive features while the microelectronicsubstrate is carried by the support member.
 95. The method of claim 94,further comprising determining a thickness variation for themicroelectronic substrate by: establishing a reference plane;determining distances from the reference plane to a plurality ofroughness features of the first surface; selecting from the determineddistances a minimum distance value; selecting from the determineddistances a maximum distance value; and subtracting the minimum distancevalue from the maximum distance value.
 96. The method of claim 94,further comprising detecting a characteristic of at least one of theprotruding conductive features with a camera while the first portion ofthe first surface is exposed and the second portion of the secondsurface is exposed.
 97. The method of claim 94, further comprising:removing a first portion of material from the first surface of themicroelectronic substrate prior to detecting a roughness of the firstsurface; and removing a second portion of material from the firstsurface of the microelectronic substrate after detecting a roughness ofthe first surface.